Design of down conversion ring mixer using 45 nm Metal gate High-K Strained-Si CMOS Technology for RF applications

被引：0
|
作者：
Chaturvedi, Abhay [1 ]
机构：
[1] GLA Univ, Dept Elect & Commun Engn, Mathura 281406, UP, India
来源：
MATERIALS TODAY-PROCEEDINGS | 2021年 / 37卷
关键词：
Down conversion; Passive mixer; FET Quad ring mixer; Metal gate/High K Strained-Si CMOS; IOT;
D O I：
10.1016/j.matpr.2020.05.834
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A FET Quad ring RF down conversion mixer is designed using Predictive Technology Model (PTM) High Performance 45 nm Metal Gate High-K Strained-Si CMOS model for RF applications. Mixer is designed for 450 MHz band with RF frequency of 464 MHz, IF frequency of 5 MHz and LO frequency of 469 MHz. High-k metal gate transistors are used due to their enhanced performance and low gate leakage current. A Low pass RC type filter is used at the mixer output to reject high frequency spurious frequency components. The mixer is well tuned for required performance parameters with special reference to 450 MHz narrow band IOT applications. The mixer shows the minimum conversion loss of -11.07 dB, 1 dB compression point (P1dB) of 3.10 dBm, SSB noise figure of 8.364 dB and high isolation of 171 dB both for LO to RF, LO to IF ports and 40 dB isolation value for RF to IF port. (C) 2020 Elsevier Ltd. All rights reserved.
引用
收藏
页码：835 / 839
页数：5
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