Planar defects in 4H-SiC PiN diodes

被引：0

作者：

Twigg, ME ^{[1
]}

Stahlbush, RE

Irvine, KG

Sumakeris, JJ

Chow, TP

Lossee, PA

Zhu, L

机构：

[1] USN, Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA

[2] Cree Inc, Durham, NC 27703 USA

[3] Rensselaer Polytech Inst, Troy, NY 12180 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2005年 / 34卷 / 04期

关键词：

silicon carbide; PiN diode; transmission electron microscopy (TEM); stacking fault (SF); dislocations;

D O I：

10.1007/s11664-005-0109-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using plan-view transmission electron microscopy (PVTEM), we have identified stacking faults (SFs) and planar defects in 4H-SiC PiN diodes subjected to electrical bias. Our observations suggest that not all planar defects seen in the PiN diodes are SFs. By performing diffraction-contrast imaging experiments using TEM, we can distinguish SFs from other planar defects. In addition, high-resolution TEM (HRTEM) imaging and analytical TEM have revealed that some planar defects consist of a 3-nm-wide SiC amorphous layer. Many of these planar defects are orientated parallel to {1 (1) over bar 00} planes, whereas others are roughly parallel to the (0001) plane. The appearance of these planar defects suggests that they are grain boundaries.

引用

页码：351 / 356

页数：6

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