Design of GGNMOS ESD protection device for radiation-hardened 0.18 μm CMOS process

被引：0
|
作者：
Wu, Jianwei [1 ]
Yu, Zongguang [1 ]
Hong, Genshen [1 ]
Xie, Rubin [1 ]
机构：
[1] China Elect Technol Grp Corp, Res Inst 58, Wuxi 214035, Jiangsu, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2020年 / 41卷 / 12期
关键词：
total ionizing dose; RHBP; GGNMOS; ESD ion implantation; STI; TLP; leakage current; DCGS; PHYSICS;
D O I：
10.1088/1674-4926/41/12/122403
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, the ESD discharge capability of GGNMOS (gate grounded NMOS) device in the radiation-hardened 0.18 mu m bulk silicon CMOS process (Rad-Hard by Process: RHBP) is optimized by layout and ion implantation design. The effects of gate length, DCGS and ESD ion implantation of GGNMOS on discharge current density and lattice temperature are studied by TCAD and device simulation. The size of DCGS, multi finger number and single finger width of ESD verification structures are designed, and the discharge capacity and efficiency of GGNMOS devices in ESD are characterized by TLP test technology. Finally, the optimized GGNMOS is verified on the DSP circuit, and its ESD performance is over 3500 V in HBM mode.
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页数：8
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