A RADIATION-HARDENED STANDARD CELL LIBRARY FOR COMMERCIAL 0.18 μM CMOS TECHNOLOGY

被引：0

作者：

Liu, Jia ^{[1
]}

Yang, Weidong ^{[1
]}

Li, Yao ^{[2
]}

Zhang, Ruitao ^{[1
]}

Yang, Jing ^{[2
]}

Feng, Xiaogang ^{[1
]}

Wang, Yuxin ^{[1
]}

Fu, Dongbing ^{[2
]}

Chen, Guangbing ^{[1
]}

Li, Ruzhang ^{[1
]}

机构：

[1] Sci & Technol Analog Integrated Circuit Lab, Chongqing 400060, Peoples R China

[2] China Elect Technol Grp Corp, Inst 24, Chongqing 400060, Peoples R China

来源：

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high-performance standard cell library is very important for the ASIC design. A radiation-hardened standard cell library can significantly enhance the reliability and performance of digital circuits that work in a hard radiation environment. We have developed a radiation-hardened standard cell library for the commercial 0.18 mu m CMOS technology. Some of the radiation-hardened techniques (such as the temporal filtering structure, the P+/N+ guard rings) have been discussed, validated and used for the standard cells. Also we have characterized this RH standard cell library to support the RTL to GDSII ASIC design flow.

引用

页数：3

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