A RADIATION-HARDENED FIELD OXIDE FOR A BULK CMOS PROCESS

被引：0

作者：

HSU, JJ ^{[1
]}

LIANG, WC ^{[1
]}

CHEN, JS ^{[1
]}

HUANG, FJ ^{[1
]}

CHOU, TG ^{[1
]}

CHEN, HH ^{[1
]}

机构：

[1] ELECTR RES & SERV ORG, ITRI, Hsinchu 31015, TAIWAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C128 / C128

页数：1

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