A RADIATION-HARDENED FIELD OXIDE FOR A BULK CMOS PROCESS

被引：0
|
作者：
HSU, JJ [1 ]
LIANG, WC [1 ]
CHEN, JS [1 ]
HUANG, FJ [1 ]
CHOU, TG [1 ]
CHEN, HH [1 ]
机构：
[1] ELECTR RES & SERV ORG, ITRI, Hsinchu 31015, TAIWAN
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 03期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C128 / C128
页数：1
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