LONG-TERM ANNEALING OF A RADIATION-HARDENED 1.0 MICRON BULK CMOS PROCESS

被引：1

作者：

RUDECK, PJ

机构：

[1] United Technologies Microelectronics Center, Inc., Colorado Springs, Colorado, 80907

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1992年 / 39卷 / 06期

关键词：

D O I：

10.1109/23.211385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Data will be reported on the degradation of transistor parameters due to a high dose rate irradiation (300 rads(Si)/s) followed by an anneal cycle. The parametric data was selected to quantify the loss in drive performance as well as leakage due to the parasitic components. The kinetics of annealing will also be addressed.

引用

页码：1903 / 1911

页数：9

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