Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD

被引：1
|
作者：
Danilov, L. V. [1 ]
Levin, R. V. [1 ]
Nevedomskyi, V. N. [1 ]
Pushnyi, B. V. [1 ]
机构：
[1] Ioffe Inst, St Petersburg, Russia
来源：
SEMICONDUCTORS | 2019年 / 53卷 / 16期
关键词：
Superlattice; MOCVD; photoluminescence; envelope-function approximation; AUGER RECOMBINATION; ABSORPTION;
D O I：
10.1134/S1063782619120091
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This paper reports the structural and photoluminescent study results of heterostructure with short-period InAs/GaSb superlattice grown by MOCVD with 8/10 ML period thickness. The photoluminescence spectra was observed in the range of 3-5 mu m with intensity peak at 3.8 mu m. SL minibands theoretical calculation with a high accuracy confirmed the experimental data obtained. This indicates that the specified structural parameters match the chosen growth conditions.
引用
收藏
页码：2078 / 2081
页数：4
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