Optical properties of the quantum dot structures self-formed in GaAg/InAs short-period superlattices grown on InP(411)A substrates

被引：0
|
作者：
Mori, J [1 ]
Nakano, T [1 ]
Hasegawa, S [1 ]
Asahi, H [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki 5670047, Japan
来源：
2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2003年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High lateral density (similar to10 quantum dot (QD) structures are self-formed by growing the (GaAS)(2)(InAS)(n) short period superlattices (SLs) on InP (411)A substrates by gas source MBE. QD structures are well-aligned along two perpendicular directions. Multi-layer quantum dot structures sandwiched with InP barrier layers showed a strong photoluminescence (PL) emission. The PL wavelength of 1.3-1.6 mum was easily obtained by controlling the SL period as well as the InAs monolayer number (layer thickness). We also fabricated the light emitting diodes (LEDs) and observed current-injection light emission.
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页码：464 / 467
页数：4
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