Room Temperature Lasing in 1-μm Microdisk Quantum Dot Lasers

被引：25

作者：

Kryzhanovskaya, Natalia V. ^{[1
,2
,3
]}

Zhukov, Alexey E. ^{[1
,2
,3
,4
]}

Maximov, Mikhail V. ^{[1
,2
,3
]}

Moiseev, Eduard I. ^{[1
,2
,3
]}

Shostak, Ivan I. ^{[1
,2
,3
]}

Nadtochiy, Alexey M. ^{[1
,2
,3
]}

Kudashova, Yulia V. ^{[1
,2
,3
]}

Lipovskii, Andrey A. ^{[1
,2
,3
]}

Kulagina, Marina M. ^{[3
]}

Troshkov, Sergey I. ^{[3
]}

机构：

[1] St Petersburg Acad Univ, St Petersburg 194021, Russia

[2] St Petersburg State Polytech Univ, St Petersburg 194064, Russia

[3] Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] St Petersburg Sci Ctr RAS, St Petersburg 197110, Russia

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2015年 / 21卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

Microdisk; quantum dots; whispering gallery modes; ACTIVE-REGION; MICROCAVITIES; DIAMETER; THRESHOLD;

D O I：

10.1109/JSTQE.2015.2439156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lasing characteristics of InAs/InGaAs quantum dot microdisks with diameter varied from 1 to 6 mu m were studied under optical pumping. The disks were fabricated with standard photolithography and two-step wet etching. We demonstrate room temperature lasing in the 1.29-1.32-mu m wavelength range (ground-state transition) in microlasers as small as 1 mu m in diameter. The microlasers demonstrate narrow linewidths (40-60 pm), low thermal impedance (85 degrees C/mW), and low threshold powers (50-100 mu W).

引用

页码：709 / 713

页数：5

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