Room temperature lasing action in an InGaN quantum dot laser under optical excitation

The first lasing action from a semiconductor laser with a 10-layer stacked In0.2Ga0.8N quantum dots (QD) was demonstrated, using atmospheric-pressure metalorganic chemical vapor deposition. The QDs were embedded in the active layer at room temperature under optical excitation. Photoluminescence was measured at room temperature with a dye laser as the excitation source. The emission intensity were accumulated over 15 pulses of the excitation source with peak wavelength of 366.7 nm, excited by a nitrogen laser with a repetition rate of 3 Hz.