Room Temperature Lasing in 1-μm Microdisk Quantum Dot Lasers

被引：25
|
作者：
Kryzhanovskaya, Natalia V. [1 ,2 ,3 ]
Zhukov, Alexey E. [1 ,2 ,3 ,4 ]
Maximov, Mikhail V. [1 ,2 ,3 ]
Moiseev, Eduard I. [1 ,2 ,3 ]
Shostak, Ivan I. [1 ,2 ,3 ]
Nadtochiy, Alexey M. [1 ,2 ,3 ]
Kudashova, Yulia V. [1 ,2 ,3 ]
Lipovskii, Andrey A. [1 ,2 ,3 ]
Kulagina, Marina M. [3 ]
Troshkov, Sergey I. [3 ]
机构：
[1] St Petersburg Acad Univ, St Petersburg 194021, Russia
[2] St Petersburg State Polytech Univ, St Petersburg 194064, Russia
[3] Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[4] St Petersburg Sci Ctr RAS, St Petersburg 197110, Russia
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2015年 / 21卷 / 06期
基金：
俄罗斯基础研究基金会;
关键词：
Microdisk; quantum dots; whispering gallery modes; ACTIVE-REGION; MICROCAVITIES; DIAMETER; THRESHOLD;
D O I：
10.1109/JSTQE.2015.2439156
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lasing characteristics of InAs/InGaAs quantum dot microdisks with diameter varied from 1 to 6 mu m were studied under optical pumping. The disks were fabricated with standard photolithography and two-step wet etching. We demonstrate room temperature lasing in the 1.29-1.32-mu m wavelength range (ground-state transition) in microlasers as small as 1 mu m in diameter. The microlasers demonstrate narrow linewidths (40-60 pm), low thermal impedance (85 degrees C/mW), and low threshold powers (50-100 mu W).
引用
收藏
页码：709 / 713
页数：5
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