Gate control and amplification of magnetoresistance in a three-terminal device

被引：6

作者：

Kum, Hyun ^{[1
]}

Jahangir, Shafat ^{[1
]}

Basu, Debashish ^{[1
]}

Saha, Dipankar ^{[2
]}

Bhattacharya, Pallab ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Nanoscale Photon & Spintron, Ann Arbor, MI 48109 USA

[2] Indian Inst Technol, Dept Elect Engn, Ctr Excellence Nanoelect, Bombay 400076, Maharashtra, India

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 15期

关键词：

INJECTION;

D O I：

10.1063/1.3652765

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gate control and amplification of magnetoresistance are demonstrated at room temperature in a fully epitaxial three-terminal GaAs-based device. In addition to the two ferromagnetic spin injector and detector electrodes of a MnAs/AlAs/GaAs:Mn/AlAs/MnAs vertical spin valve, a third non-magnetic gate electrode (Ti/Au) is placed directly on top of the heavily p-doped GaAs channel layer. The magnetoresistance of the device can be amplified to reach values as high as 500% at room temperature with the application of a bias to the gate terminal, which modulates the spin selectivity of the tunnel barriers. The experimental results are modeled by solving spin drift-diffusion and tunneling equations self consistently. (C) 2011 American Institute of Physics. [doi:10.1063/13652765]

引用

页数：3

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