Dynamic resistive switching in a three-terminal device based on phase separated manganites

被引：0
|
作者：
Wang Zhi-Qiang [1 ,2 ,3 ]
Yan Zhi-Bo [1 ]
Qin Ming-Hui [2 ,3 ]
Gao Xing-Sen [2 ,3 ]
Liu Jun-Ming [1 ]
机构：
[1] Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China
[2] S China Normal Univ, Inst Adv Mat, Guangzhou 510006, Guangdong, Peoples R China
[3] S China Normal Univ, Lab Quantum Engn & Mat, Guangzhou 510006, Guangdong, Peoples R China
来源：
CHINESE PHYSICS B | 2015年 / 24卷 / 03期
基金：
中国国家自然科学基金;
关键词：
phase separation; dielectrophoresis; resistive switching; memory device; PERCOLATION; TRANSITION;
D O I：
10.1088/1674-1056/24/3/037101
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A three-terminal device based on electronic phase separated manganites is suggested to produce high performance resistive switching. Our Monte Carlo simulations reveal that the conductive filaments can be formed/annihilated by reshaping the ferromagnetic metal phase domains with two cross-oriented switching voltages. Besides, by controlling the high resistance state (HRS) to a stable state that just after the filament is ruptured, the resistive switching remains stable and reversible, while the switching voltage and the switching time can be greatly reduced.
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页数：5
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