High-speed optoelectronics receivers in SiGe

被引：13

作者：

Gupta, A ^{[1
]}

Levitan, SP ^{[1
]}

Selavo, L ^{[1
]}

Chiarulli, DM ^{[1
]}

机构：

[1] Univ Pittsburgh, Pittsburgh, PA 15261 USA

来源：

17TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS: DESIGN METHODOLOGIES FOR THE GIGASCALE ERA | 2004年

关键词：

D O I：

10.1109/ICVD.2004.1261054

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper focuses on the investigation of integrated CMOS and Silicon/Germanium (SiGe) devices for highspeed optical receiver circuits. In this paper, we present several competitive designs of front-end transimpedance amplifiers (TIA) for optical receiver applications using the IBM 5HP (0.5micron) SiGe technology. This technology exhibits f(T) and f(MAX) of 47GHz and 65GHz respectively. Spectre simulations in the Cadence Affirma analog design environment are conducted for both the TIA's and a complete receiver circuit consisting of a TIA, a cascaded multi-stage differential amplifier and a multi-stage inverting amplifier at the single supply voltage of 3.3V. We also discuss the practicality of using SiGe based photodetectors for 1.3-1.5um wavelength light and the use of Neolinear's NeoCircuit/NeoCell mixed signal design tools for optimization of the analog circuits.

引用

页码：957 / 960

页数：4

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