Low Power Consumption and High-Speed Ge Receivers

被引：0

作者：

Virot, L. ^{[1
,2
,3
,4
]}

Benedikovic, D. ^{[1
]}

Szelag, B. ^{[2
,3
]}

Alonso-Ramos, C. ^{[1
]}

Hartmann, J. M. ^{[2
,3
]}

Crozat, P. ^{[1
]}

Cassan, E. ^{[1
]}

Marris-Morini, D. ^{[1
]}

Baudot, C. ^{[4
]}

Boeuf, F. ^{[4
]}

Fedeli, J. M. ^{[2
,3
]}

Kopp, C. ^{[2
,3
]}

Vivien, L. ^{[1
]}

机构：

[1] Univ Paris Saclay, Univ Paris Sud, CNRS, Ctr Nanosci & Nanotechnol C2N,UMR 9001, Site Orsay, F-91405 Orsay, France

[2] Univ Grenoble Alpes, Minatec Campus, F-38054 Grenoble, France

[3] CEA, LETI, Minatec Campus, F-38054 Grenoble, France

[4] STMicroelectronics, Silicon Technol Dev, Crolles, France

来源：

2017 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) | 2017年

基金：

欧洲研究理事会;

关键词：

GERMANIUM; PHOTODETECTOR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new Si/Ge/Si heterojunction based waveguide photodetector has been demonstrated in order to reduce the fabrication cost, increase the responsivity, and improve process robustness. State of the art characteristics in terns of dark current, responsivity and bandwidth have been obtained. Furtheunore, such photodetectors were characterized in avalanche mode in order to improve the sensitivity and reduce the overall power consumption of the optical circuit.

引用

页数：3

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