High-speed, Monolithic CMOS Receivers with Ge on Si Waveguide Photodetectors

被引：2

作者：

Masini, Gianlorenzo ^{[1
]}

Sahni, Subal ^{[1
]}

Analui, Behnam ^{[1
]}

Capellini, Giovanni ^{[1
]}

Witzens, Jeremy ^{[1
]}

Gunn, Cary ^{[1
]}

机构：

[1] Luxtera Inc, 2320 Camino Vida Roble, Carlsbad, CA 92011 USA

来源：

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES | 2008年 / 16卷 / 10期

关键词：

D O I：

10.1149/1.2986818

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper describes Luxtera's approach to the monolithic integration of Germanium photodetectors with CMOS electronics for high speed optical transceivers. Insertion of the Germanium module into a CMOS process and its impact on the design of the detectors is discussed. The deployment of the devices in 4x10 Gbps receivers is also described, wherein an optical sensitivity of 19 dBm for a bit error rate of 1e-12 is demonstrated. The optimization of the transimpedance amplifier to take advantage of the reduced capacitance (<20fF) of the waveguide detectors is also discussed.

引用

页码：601 / +

页数：2

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