Multilayer ion trap technology for scalable quantum computing and quantum simulation

被引：20
|
作者：
Bautista-Salvador, A. [1 ,2 ,3 ]
Zarantonello, G. [1 ,2 ]
Hahn, H. [1 ,2 ]
Preciado-Grijalva, A. [1 ]
Morgner, J. [1 ,2 ]
Wahnschaffe, M. [1 ,2 ,3 ]
Ospelkaus, C. [1 ,2 ,3 ]
机构：
[1] Phys Tech Bundesanstalt, Bundesallee 100, D-38116 Braunschweig, Germany
[2] Leibniz Univ Hannover, Inst Quantum Opt, Welfengarten 1, D-30167 Hannover, Germany
[3] Leibniz Univ Hannover, Lab Nano & Quantum Engn, Schneiderberg 39, D-30167 Hannover, Germany
来源：
NEW JOURNAL OF PHYSICS | 2019年 / 21卷 / 04期
关键词：
surface-electrode ion trap; atom chip; microfabrication; quantum logic and simulation; PAUL TRAP; MANIPULATION;
D O I：
10.1088/1367-2630/ab0e46
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We present a novel ion trap fabrication method enabling the realization of multilayer ion traps scalable to an in principle arbitrary number of metal-dielectric levels. We benchmark our method by fabricating a multilayer ion trap with integrated three-dimensional microwave circuitry. We demonstrate ion trapping and microwave control of the hyperfine states of a laser cooled Be-9(+) ion held at a distance of 35 mu m above the trap surface. This method can be used to implement large-scale ion trap arrays for scalable quantum information processing and quantum simulation.
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页数：7
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