Scalable quantum computing with ion-implanted dopant atoms in silicon

被引:0
|
作者
Morello, A. [1 ]
Tosi, G. [1 ]
Mohiyaddin, F. A. [1 ]
Schmitt, V. [1 ]
Mourik, V. [1 ]
Botzem, T. [1 ]
Laucht, A. [1 ]
Pla, J. J. [1 ]
Tenberg, S. [1 ]
Savytskyy, R. [1 ]
Madzik, M. [1 ]
Hudson, F. [1 ]
Dzurak, A. S. [1 ]
Itoh, K. M. [2 ]
Jakob, A. M. [3 ]
Johnson, B. C. [3 ]
McCallum, J. C. [3 ]
Jamieson, D. N. [3 ]
机构
[1] UNSW Sydney, Sch Elect Engn & Telecommun, Sydney, NSW, Australia
[2] Keio Univ, Tokyo, Japan
[3] Univ Melbourne, Sch Phys, Melbourne, Vic, Australia
基金
澳大利亚研究理事会;
关键词
SPIN QUBIT;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a scalable strategy to manufacture quantum computer devices, by encoding quantum information in the combined electron-nuclear spin state of individual ion-implanted phosphorus dopant atoms in silicon. Our strategy allows a typical pitch between quantum bits of order 200 nm, and retains compatibility with the standard fabrication processes adopted in classical CMOS nano-electronic devices. We theoretically predict fast and high-fidelity quantum logic operations, and present preliminary experimental progress towards the realization of a "flip-flop" qubit system.
引用
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页数:4
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