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- [2] DOPANT DEPENDENCE OF THE OXIDATION RATE OF ION-IMPLANTED SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 203 - 209
- [3] ION-IMPLANTED DOPANT ENVIRONMENTS IN AMORPHOUS-SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 : 622 - 624
- [4] ACTIVATION OF BORON-DOPANT ATOMS IN ION-IMPLANTED DIAMONDS [J]. PHYSICAL REVIEW B, 1988, 38 (08): : 5576 - 5584
- [5] DOPANT REDISTRIBUTION BY PULSED-LASER ANNEALING OF ION-IMPLANTED SILICON [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 66 (1-2): : 43 - 59
- [7] ANNEALING EFFECTS WHEN ACTIVATING DOPANT ATOMS IN ION-IMPLANTED DIAMOND LAYERS [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 1387 - 1390
- [8] THE INFLUENCE OF FOREIGN ATOMS ON THE EPITAXIAL ANNEALING OF ION-IMPLANTED SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 82 (01): : 125 - 133
- [10] ION-IMPLANTED ARSENIC IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 697 - 701