Generation and accumulation of dislocations on the silicon surface under the action of pulse-periodic emission from a YAG:Nd laser

被引：5

作者：

Banishev, AF ^{[1
]}

Golubev, VS ^{[1
]}

Kremnev, AY ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Problems Laser & Informat Technol, Shatura 140700, Moscow Oblast, Russia

来源：

TECHNICAL PHYSICS | 2001年 / 46卷 / 08期

关键词：

Silicon; Laser Pulse; Power Density; Pulse Repetition; Silicon Surface;

D O I：

10.1134/1.1395116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Solid-phase damage of the silicon surface due to the generation and accumulation of dislocations is studied. The dislocations are generated under the pulse-periodic action of a YAG : Nd laser. The number of laser pulses that causes surface damage vs. power density and pulse repetition period is derived. A mechanism responsible for the generation and accumulation of the dislocations at the surface is suggested. (C) 2001 MAIK "Nauka/ Interperiodica".

引用

页码：962 / 967

页数：6

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