Generation and accumulation of dislocations on the silicon surface under the action of pulse-periodic emission from a YAG:Nd laser

被引：5
|
作者：
Banishev, AF [1 ]
Golubev, VS [1 ]
Kremnev, AY [1 ]
机构：
[1] Russian Acad Sci, Inst Problems Laser & Informat Technol, Shatura 140700, Moscow Oblast, Russia
来源：
TECHNICAL PHYSICS | 2001年 / 46卷 / 08期
关键词：
Silicon; Laser Pulse; Power Density; Pulse Repetition; Silicon Surface;
D O I：
10.1134/1.1395116
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Solid-phase damage of the silicon surface due to the generation and accumulation of dislocations is studied. The dislocations are generated under the pulse-periodic action of a YAG : Nd laser. The number of laser pulses that causes surface damage vs. power density and pulse repetition period is derived. A mechanism responsible for the generation and accumulation of the dislocations at the surface is suggested. (C) 2001 MAIK "Nauka/ Interperiodica".
引用
收藏
页码：962 / 967
页数：6
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