The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy

被引：0
|
作者：
Foxon, CT [1 ]
Novikov, SV
Liao, Y
Winser, AJ
Harrison, I
Li, T
Campion, RP
Staddon, CR
Davis, CS
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 228卷 / 01期
关键词：
D O I：
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The transition from As-doped GaN showing strong blue emission (similar to2.6 eV) at room temperature to the formation of GaN1-xAsx alloys for films grown by molecular beam epitaxy was investigated. This study demonstrates that with increasing N to Ga ratio there is first an increase in the intensity of blue emission at about 2.6 eV and then a transition to the growth of GaN1-xAsx alloy films. Several possible models, which can explain how this might occur are presented.
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页码：203 / 206
页数：4
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