Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

被引：4

作者：

Liu, XY ^{[1
]}

Andersson, TG ^{[1
]}

机构：

[1] Chalmers Univ Technol, Dept Microtechnol & Neurosci, S-41296 Gothenburg, Sweden

来源：

APPLIED SURFACE SCIENCE | 2004年 / 226卷 / 04期

关键词：

GaN; AlGaN; surface roughness; MBE; heterostructure;

D O I：

10.1016/j.apsusc.2003.10.043

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Surfaces of GaN and AlGaN, intended for AlGaN/GaN heterostructures, were investigated by in situ reflection high energy electron diffraction and atomic force microscopy. Layers were grown by plasma-assisted molecular beam epitaxy on sapphire substrates. The GaN buffer layer thickness was about 74 nm while the Al-composition and thickness varied from x = 0 to I and 0 to 7.2 nm, respectively. An empirical formula showing the lattice mismatch for Al0.4Ga0.6N/GaN as a function of film thickness is deduced. As a result, we find the Al atoms have the effect to smoothen the film surface. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：331 / 334

页数：4

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