Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy

被引：19
|
作者：
Cheng, TS [1 ]
Novikov, SV
Foxon, CT
Orton, JW
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England
来源：
SOLID STATE COMMUNICATIONS | 1999年 / 109卷 / 07期
基金：
英国工程与自然科学研究理事会;
关键词：
semiconductors; epitaxy; impurities in semiconductors;
D O I：
10.1016/S0038-1098(98)00601-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on an investigation by Auger Electron Spectroscopy (AES) of Mg-doped GaN films grown by Molecular Beam Epitaxy (MBE). This study shows that there is a finite concentration gradient in a region close to the surface (10-80 nm) in which the Mg concentration decreases rapidly from a few percent of a monolayer to a bulk value of about (2-3) x 10(19) cm(-3) for heavily doped samples. Such behaviour can be understood in terms of a kinetically limited migration of the dopant to the surface during the growth. (C) 1999 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：439 / 443
页数：5
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