The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy

被引：0
|
作者：
Foxon, CT [1 ]
Novikov, SV
Liao, Y
Winser, AJ
Harrison, I
Li, T
Campion, RP
Staddon, CR
Davis, CS
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 228卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The transition from As-doped GaN showing strong blue emission (similar to2.6 eV) at room temperature to the formation of GaN1-xAsx alloys for films grown by molecular beam epitaxy was investigated. This study demonstrates that with increasing N to Ga ratio there is first an increase in the intensity of blue emission at about 2.6 eV and then a transition to the growth of GaN1-xAsx alloy films. Several possible models, which can explain how this might occur are presented.
引用
收藏
页码：203 / 206
页数：4
相关论文
共 50 条
  • [31] Modulation of arsenic incorporation in GaN layers grown by molecular beam epitaxy
    Novikov, SV
    Zhao, LX
    Foxon, CT
    Ber, BJ
    Kovarsky, AP
    Harrison, I
    Fay, MW
    Brown, PD
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 539 - 544
  • [32] Investigation of InN layers grown by molecular beam epitaxy on GaN templates
    Vilalta-Clemente, A.
    Mutta, G. R.
    Chauvat, M. P.
    Morales, M.
    Doualan, J. L.
    Ruterana, P.
    Grandal, J.
    Sanchez-Garcia, M. A.
    Calle, F.
    Valcheva, E.
    Kirilov, K.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (05): : 1079 - 1082
  • [33] GaN layers grown directly onto GaAs by molecular beam epitaxy
    Pécz, B
    Tóth, L
    Czigány, Z
    Amimer, K
    Georgakilas, A
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, (169): : 293 - 296
  • [34] Si and Mg doped GaN layers grown by gas source molecular beam epitaxy using ammonia
    Grandjean, N
    Massies, J
    Leroux, M
    NITRIDE SEMICONDUCTORS, 1998, 482 : 211 - 216
  • [35] TEM assessment of As-doped GaN epitaxial layers grown on sapphire
    Fay, MW
    Harrison, I
    Larkins, EC
    Novikov, SV
    Foxon, CT
    Brown, PD
    ELECTRON MICROSCOPY AND ANALYSIS 2003, 2004, (179): : 23 - 26
  • [36] Influence of buffer layers on the structural properties of molecular beam epitaxy grown GaN layers
    Kirchner, V
    Ebel, R
    Heinke, H
    Einfeldt, S
    Hommel, D
    Selke, H
    Ryder, PL
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 47 - 51
  • [37] The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using As4 molecules
    Foxon, CT
    Harrison, I
    Novikov, SV
    Li, T
    Campion, RP
    Staddon, CR
    Davis, CS
    Winser, AJ
    Kovarsky, AP
    Ber, BJ
    JOURNAL OF CRYSTAL GROWTH, 2002, 234 (2-3) : 343 - 348
  • [38] Polarized Emission from Single GaN Quantum Dots Grown by Molecular Beam Epitaxy
    Amloy, S.
    Yu, K. H.
    Karlsson, K. F.
    Farivar, R.
    Andersson, T. G.
    Holtz, P. O.
    PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [39] Metalorganic molecular beam epitaxy of GaNAs alloys on (001)GaAs
    Uesugi, K
    Suemune, I
    JOURNAL OF CRYSTAL GROWTH, 1998, 189 : 490 - 495
  • [40] Raman studies on oxygen doped GaN grown by molecular beam epitaxy
    Papadimitriou, D
    Ptak, AJ
    Korakakis, D
    Giles, NC
    Myers, TH
    GAN AND RELATED ALLOYS-2001, 2002, 693 : 41 - 46
12345