The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy

被引：0

作者：

Foxon, CT ^{[1
]}

Novikov, SV

Liao, Y

Winser, AJ

Harrison, I

Li, T

Campion, RP

Staddon, CR

Davis, CS

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] Univ Nottingham, Sch Elect & Elect Engn, Nottingham NG7 2RD, England

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2001年 / 228卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The transition from As-doped GaN showing strong blue emission (similar to2.6 eV) at room temperature to the formation of GaN1-xAsx alloys for films grown by molecular beam epitaxy was investigated. This study demonstrates that with increasing N to Ga ratio there is first an increase in the intensity of blue emission at about 2.6 eV and then a transition to the growth of GaN1-xAsx alloy films. Several possible models, which can explain how this might occur are presented.

引用

页码：203 / 206

页数：4

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