The influence of substrate polarity on the blue emission from as-doped GaN layers grown by molecular beam epitaxy

被引：0

作者：

Novikov, SV ^{[1
]}

Zhao, LX ^{[1
]}

Foxon, CT ^{[1
]}

Harrison, I ^{[1
]}

Campion, RP ^{[1
]}

Staddon, CR ^{[1
]}

Kang, SW ^{[1
]}

Kryliouk, O ^{[1
]}

Anderson, T ^{[1
]}

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

GAN AND RELATED ALLOYS - 2003 | 2003年 / 798卷

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The influence of sample orientation and polarity on the blue emission from As-doped GaN layers grown by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated. Arsenic doped GaN layers were grown under identical PA-MBE conditions on several types of substrates including c-plane (0001) sapphire and polar and non-polar GaN templates grown by metal-organic vapour phase epitaxy (MOVPE). Non-polar GaN MOVPE templates were grown on a-plane (11-20) sapphire and LiAlO2 (100). The orientation and polarity have a strong influence on the morphology and the optical properties of As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of (000-1) oriented N-polarity layers.

引用

页码：533 / 538

页数：6

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