The influence of substrate polarity on the blue emission from as-doped GaN layers grown by molecular beam epitaxy

被引:0
|
作者
Novikov, SV [1 ]
Zhao, LX [1 ]
Foxon, CT [1 ]
Harrison, I [1 ]
Campion, RP [1 ]
Staddon, CR [1 ]
Kang, SW [1 ]
Kryliouk, O [1 ]
Anderson, T [1 ]
机构
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
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中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The influence of sample orientation and polarity on the blue emission from As-doped GaN layers grown by plasma-assisted molecular beam epitaxy (PA-MBE) was investigated. Arsenic doped GaN layers were grown under identical PA-MBE conditions on several types of substrates including c-plane (0001) sapphire and polar and non-polar GaN templates grown by metal-organic vapour phase epitaxy (MOVPE). Non-polar GaN MOVPE templates were grown on a-plane (11-20) sapphire and LiAlO2 (100). The orientation and polarity have a strong influence on the morphology and the optical properties of As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of (000-1) oriented N-polarity layers.
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页码:533 / 538
页数:6
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