Over 10W C-Ku Band GaN MMIC Non-uniform Distributed Power Amplifier with Broadband Couplers

被引：0

作者：

Masuda, Satoshi ^{[1
]}

Akasegawa, Akihiko ^{[1
]}

Ohki, Toshihiro ^{[1
]}

Makiyama, Kozo ^{[1
]}

Okamoto, Naoya ^{[1
]}

Imanishi, Kenji ^{[1
]}

Kikkawa, Toshihide ^{[1
]}

Shigematsu, Hisao ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Kanagawa 2430197, Japan

来源：

2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT) | 2010年

关键词：

GaN HEMT; MMIC; non-uniform distributed power amplifier; C-Ku band; WIDE-BAND;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 6-18 GHz monolithic microwave integrated circuit (MMIC) power amplifier (PA) was successfully developed using a quarter wavelength short stub and a monolithic broadband coupler for a non-uniform distributed power amplifier (NDPA) topology. T his topology improved the output power at 18 GHz and attained a flat output power profile over 6-18 GHz. It also achieved filtering characteristics for both lower and higher cut-off frequencies. A fabricated MMIC PA with 0.25 mu m GaN HEMTs delivered an output power of more than 10 W with average power added efficiency (PAE) of 18% over 6 to 18 GHz. To the best of our knowledge, this is the best combination of output power and bandwidth for any solid-state MMIC amplifier operating up to the full Ku-band.

引用

页码：1388 / 1391

页数：4

共 45 条

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