C-Ku band ultra broadband GaN MMIC amplifier with 20W output power

被引：0

作者：

Kuwata, Eigo ^{[1
]}

Yamanaka, Koji

Koyama, Hidetoshi ^{[2
]}

Kamo, Yoshitaka ^{[2
]}

Kirikoshi, Tasuku ^{[2
]}

Nakayama, Masatoshi

Hirano, Yoshihito

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, 5-1-1 Ofuna, Kamakura, Kanagawa 2478501, Japan

[2] Mitsubishi Electr Corp, Tokyo 1008310, Japan

来源：

ASIA-PACIFIC MICROWAVE CONFERENCE 2011 | 2011年

关键词：

Broadband amplifiers; GaN HEMT; High power amplifiers; microwave; band width;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Circuit (MMIC) high power amplifier (HPA), which features high power and high gain over C-Ku band 115 % relative bandwidth. A C-Ku band (6 similar to 18 GHz) GaN HEMT MMIC amplifier was manufactured and measured. The circuit dimension is 4.8 mm by 4 mm. The fabricated MMIC HPA derived an averaged output power of 20 W with averaged power gain of 9.6 dB over C-Ku band. The output power is state-of-the-art output power for GaN HEMT MMIC amplifiers with more than 100 % relative bandwidth and up to Ku band operation frequency.

引用

页码：1558 / 1561

页数：4

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