Schottky diodes in 40nm bulk CMOS for 1310nm high-speed optical receivers

被引：0
|
作者：
Diets, Wouter [1 ]
Steyaert, Michiel [1 ]
Tavernier, Filip [1 ]
机构：
[1] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Leuven, Belgium
来源：
2017 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) | 2017年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, the use of Schottky diodes in CMOS as 1310nm photodetectors is proposed. In contrast with regular pn-diodes, these diodes can convert photons with a wavelength longer than 1.1 mu m to a high bandwidth current through internal photo emission. Distributed layout n-well and p-well Schottky diodes have been fabricated and characterized in 40nm bulk CMOS. The measured 1310nm DC responsivity for the n-well and p-well Schottky diodes is 0.4mA/W and 0.35A/W respectively for IV reverse bias. To the authors' knowledge, this is the first 1310nm CMOS photodetector reported.
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页数：3
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