Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application

被引：12

作者：

Tseng, Hsueh-Chih ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Huang, Jheng-Jie ^{[1
]}

Chen, Yu-Ting ^{[3
]}

Yang, Po-Chun ^{[3
]}

Huang, Hui-Chun ^{[4
]}

Gan, Der-Shin ^{[4
]}

Ho, New-Jin ^{[4
]}

Sze, Simon M. ^{[5
]}

Tsai, Ming-Jinn ^{[6
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[3] Natl Sun Yat Sen Univ, Dept Electroopt Engn, Kaohsiung 804, Taiwan

[4] Natl Sun Yat Sen Univ, Dept Mat Sci & Engn, Kaohsiung 804, Taiwan

[5] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[6] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu, Taiwan

来源：

THIN SOLID FILMS | 2011年 / 520卷 / 05期

关键词：

Nonvolatile resistance switching memory; RRAM; Yb2O3; Forming; RRAM; RESISTANCE; MECHANISM; DEVICES; MODEL;

D O I：

10.1016/j.tsf.2011.07.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper studies the effects of both the positive and negative forming processes on the resistive switching characteristics of a Pt/Yb2O3/TiN RRAM device. The polarity of the forming process can determine the transition mechanism, either bipolar or unipolar. Bipolar behavior exists after the positive forming process, while unipolar behavior exists after the negative forming process. Furthermore, the bipolar switching characteristics of the Pt/Yb2O3/TiN device can be affected by using a reverse polarity forming treatment, which not only reduces the set and reset voltage, but also improves the on/off ratio. Crown Copyright (C) 2011 Published by Elsevier B. V. All rights reserved.

引用

页码：1656 / 1659

页数：4

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