Measurement of Ferroelectric Properties of Nanometer Scaled Individual Metal/Hf0.5Zr0.5O2/Metal Capacitors

被引:9
|
作者
Huang, Fei [1 ,2 ]
Passlack, Matthias [3 ]
Liew, San Lin [4 ]
Yu, Zhouchangwan [2 ]
Lin, Qing [2 ]
Babadi, Aein [5 ]
Hou, Vincent D. -H. [4 ]
McIntyre, Paul C. [5 ]
Wong, S. Simon [2 ]
机构
[1] TSMC, Corp Res, San Jose, CA 95134 USA
[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
[3] Taiwan Semicond Mfg Co, Corp Res, San Jose, CA 95134 USA
[4] Taiwan Semicond Mfg Co, Hsinchu 30078, Taiwan
[5] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
关键词
Ferroelectric Hf0.5Zr0.5O2; nanometer scaled capacitor; endurance; FUTURE;
D O I
10.1109/LED.2021.3136309
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ferroelectric properties of individual TiN/Hf0.5Zr0.5O2/TiN capacitors have been measured for technologically relevant areas as small as 60 nm x 70 nm, using direct detection of ultralow charge. A crossbar architecture has been utilized to fabricate the ferroelectric capacitors. Switching polarization of 40.1 mu C/cm(2) >= P-sw >= 16.7 mu C/cm(2) and coercive field 1.4 MV/cm >= E-c >= 1.09 MV/cm have been observed for sizes between 1.1 mu m(2) and 4200 nm(2) without discernable trend as function of capacitor size in the present data set. Measured bipolar stress endurance exceeds the maximum measured cycles of 10(10) although some capacitors start to show signs of degradation after 10(9) cycles. A clear correlation between P-sw degradation and increased leakage current is observed. The direct measurement of such small area capacitors has been enabled by equipment and circuit design innovations. The present setup allows direct measurement of ferroelectric properties for capacitors as small as 1900 nm(2) while further improvements could extend the size limit to 950 nm(2) where the design window appears to close.
引用
收藏
页码:212 / 215
页数:4
相关论文
共 50 条
  • [21] Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films
    Cao, Rongrong
    Wang, Yan
    Zhao, Shengjie
    Yang, Yang
    Zhao, Xiaolong
    Wang, Wei
    Zhang, Xumeng
    Lv, Hangbing
    Liu, Qi
    Liu, Ming
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (08) : 1207 - 1210
  • [22] Charge transport in thin layers of ferroelectric Hf0.5Zr0.5O2
    Orlov O.M.
    Islamov D.R.
    Chernikova A.G.
    Kozodaev M.G.
    Markeev A.M.
    Perevalov T.V.
    Gritsenko V.A.
    Krasnikov G.Y.
    Orlov, O.M. (oorlov@mikron.ru), 1600, Maik Nauka Publishing / Springer SBM (45): : 350 - 356
  • [23] Tensile stress regulated microstructures and ferroelectric properties of Hf0.5Zr0.5O2 films
    Huo, Siying
    Zheng, Junfeng
    Liu, Yuanyang
    Li, Yushan
    Tao, Ruiqiang
    Lu, Xubing
    Liu, Junming
    CHINESE PHYSICS B, 2023, 32 (12)
  • [24] Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf0.5Zr0.5O2
    Chouprik, Anastasia
    Kirtaev, Roman
    Korostylev, Evgeny
    Mikheev, Vitalii
    Spiridonov, Maxim
    Negrov, Dmitrii
    NANOMATERIALS, 2022, 12 (09)
  • [25] Realizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layers
    Lin, Yuh-Chen
    McGuire, Felicia
    Franklin, Aaron D.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (01):
  • [26] Unexpectedly large remanent polarization of Hf0.5Zr0.5O2 metal-ferroelectric-metal capacitor fabricated without breaking vacuum
    Lee, Younghwan
    Hsain, H. Alex
    Fields, Shelby S.
    Jaszewski, Samantha T.
    Horgan, Madison D.
    Edgington, Patrick G.
    Ihlefeld, Jon F.
    Parsons, Gregory N.
    Jones, Jacob L.
    APPLIED PHYSICS LETTERS, 2021, 118 (01)
  • [27] Recorded Ferroelectric Polarization Switching of Hf0.5Zr0.5O2 Capacitors Achieved by Thermal Rewake-up
    Zhang, Zichong
    Yang, Yifan
    Su, Rui
    Lin, Tonghui
    Miao, Xiangshui
    Wang, Xingsheng
    8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024, 2024, : 154 - 156
  • [28] Ferroelectric Characterization in Ultrathin Hf0.5Zr0.5O2 MFIS Capacitors by Piezoresponse Force Microscopy (PFM) in Vacuum
    Wu, Cheng-Hung
    Useinov, Artur
    Wu, Tian-Li
    Su, Chun-Jung
    2021 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), 2021,
  • [29] Effects of thickness scaling on the dielectric properties of Hf0.5Zr0.5O2 ferroelectric thin films
    Hao, Puqi
    Li, Huashan
    Zeng, Binjian
    Yang, Qijun
    Tang, Tianqi
    Zheng, Shuaizhi
    Peng, Qiangxiang
    Liao, Jiajia
    Zhang, Sirui
    Zhou, Yichun
    Liao, Min
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (13)
  • [30] Effects of thickness scaling on the dielectric properties of Hf0.5Zr0.5O2 ferroelectric thin films
    Puqi Hao
    Huashan Li
    Binjian Zeng
    Qijun Yang
    Tianqi Tang
    Shuaizhi Zheng
    Qiangxiang Peng
    Jiajia Liao
    Sirui Zhang
    Yichun Zhou
    Min Liao
    Journal of Materials Science: Materials in Electronics, 2023, 34