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- [21] Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin FilmsIEEE ELECTRON DEVICE LETTERS, 2018, 39 (08) : 1207 - 1210Cao, Rongrong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaWang, Yan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaZhao, Shengjie论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaYang, Yang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaZhao, Xiaolong论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaWang, Wei论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaZhang, Xumeng论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaLv, Hangbing论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaLiu, Qi论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R ChinaLiu, Ming论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Univ Chinese Acad Sci, Beijing 100049, Peoples R China Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China
- [22] Charge transport in thin layers of ferroelectric Hf0.5Zr0.5O2Orlov, O.M. (oorlov@mikron.ru), 1600, Maik Nauka Publishing / Springer SBM (45): : 350 - 356Orlov O.M.论文数: 0 引用数: 0 h-index: 0机构: JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblast JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastIslamov D.R.论文数: 0 引用数: 0 h-index: 0机构: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrentieva 13, Novosibirsk Novosibirsk State University, ul. Pirogova 2, Novosibirsk JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastChernikova A.G.论文数: 0 引用数: 0 h-index: 0机构: Moskow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow oblast JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastKozodaev M.G.论文数: 0 引用数: 0 h-index: 0机构: Moskow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow oblast JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastMarkeev A.M.论文数: 0 引用数: 0 h-index: 0机构: Moskow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudny, Moscow oblast JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastPerevalov T.V.论文数: 0 引用数: 0 h-index: 0机构: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrentieva 13, Novosibirsk Novosibirsk State University, ul. Pirogova 2, Novosibirsk JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastGritsenko V.A.论文数: 0 引用数: 0 h-index: 0机构: Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, pr. Akad. Lavrentieva 13, Novosibirsk Novosibirsk State University, ul. Pirogova 2, Novosibirsk JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblastKrasnikov G.Y.论文数: 0 引用数: 0 h-index: 0机构: JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblast Public JSC Research Institute of Molecular Electronics and Micron, Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblast JSC Research Institute of Molecular Electronics (NIIME), Pervyi Zapadnyi proezd 12/1, Zelenograd, Moscow oblast
- [23] Tensile stress regulated microstructures and ferroelectric properties of Hf0.5Zr0.5O2 filmsCHINESE PHYSICS B, 2023, 32 (12)Huo, Siying论文数: 0 引用数: 0 h-index: 0机构: South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R China South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Peoples R China South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R ChinaZheng, Junfeng论文数: 0 引用数: 0 h-index: 0机构: South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R China South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Peoples R China South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R ChinaLiu, Yuanyang论文数: 0 引用数: 0 h-index: 0机构: South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R China South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Peoples R China South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R ChinaLi, Yushan论文数: 0 引用数: 0 h-index: 0机构: South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R China South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Peoples R China South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R ChinaTao, Ruiqiang论文数: 0 引用数: 0 h-index: 0机构: South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R China South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Peoples R China South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R ChinaLu, Xubing论文数: 0 引用数: 0 h-index: 0机构: South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R China South China Normal Univ, South China Acad Adv Optoelect, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Peoples R China South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R ChinaLiu, Junming论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Peoples R China Nanjing Univ, Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China South China Normal Univ, Inst Adv Mat, Guangzhou 510006, Peoples R China
- [24] Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf0.5Zr0.5O2NANOMATERIALS, 2022, 12 (09)Chouprik, Anastasia论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, 9 Inst Skii Lane, Dolgoprudnyi 141700, Russia Moscow Inst Phys & Technol, 9 Inst Skii Lane, Dolgoprudnyi 141700, RussiaKirtaev, Roman论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, 9 Inst Skii Lane, Dolgoprudnyi 141700, Russia Moscow Inst Phys & Technol, 9 Inst Skii Lane, Dolgoprudnyi 141700, RussiaKorostylev, Evgeny论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, 9 Inst Skii Lane, Dolgoprudnyi 141700, Russia Moscow Inst Phys & Technol, 9 Inst Skii Lane, Dolgoprudnyi 141700, RussiaMikheev, Vitalii论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, 9 Inst Skii Lane, Dolgoprudnyi 141700, Russia Moscow Inst Phys & Technol, 9 Inst Skii Lane, Dolgoprudnyi 141700, RussiaSpiridonov, Maxim论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, 9 Inst Skii Lane, Dolgoprudnyi 141700, Russia Moscow Inst Phys & Technol, 9 Inst Skii Lane, Dolgoprudnyi 141700, RussiaNegrov, Dmitrii论文数: 0 引用数: 0 h-index: 0机构: Moscow Inst Phys & Technol, 9 Inst Skii Lane, Dolgoprudnyi 141700, Russia Moscow Inst Phys & Technol, 9 Inst Skii Lane, Dolgoprudnyi 141700, Russia
- [25] Realizing ferroelectric Hf0.5Zr0.5O2 with elemental capping layersJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (01):Lin, Yuh-Chen论文数: 0 引用数: 0 h-index: 0机构: Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USAMcGuire, Felicia论文数: 0 引用数: 0 h-index: 0机构: Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USAFranklin, Aaron D.论文数: 0 引用数: 0 h-index: 0机构: Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA Duke Univ, Dept Chem, Durham, NC 27708 USA Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
- [26] Unexpectedly large remanent polarization of Hf0.5Zr0.5O2 metal-ferroelectric-metal capacitor fabricated without breaking vacuumAPPLIED PHYSICS LETTERS, 2021, 118 (01)Lee, Younghwan论文数: 0 引用数: 0 h-index: 0机构: North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USAHsain, H. Alex论文数: 0 引用数: 0 h-index: 0机构: North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USAFields, Shelby S.论文数: 0 引用数: 0 h-index: 0机构: Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USAJaszewski, Samantha T.论文数: 0 引用数: 0 h-index: 0机构: Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USAHorgan, Madison D.论文数: 0 引用数: 0 h-index: 0机构: North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USAEdgington, Patrick G.论文数: 0 引用数: 0 h-index: 0机构: North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USAIhlefeld, Jon F.论文数: 0 引用数: 0 h-index: 0机构: Univ Virginia, Dept Mat Sci & Engn, Charlottesville, VA 22904 USA Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USAParsons, Gregory N.论文数: 0 引用数: 0 h-index: 0机构: North Carolina State Univ, Dept Chem & Biomol Engn, Raleigh, NC 27695 USA North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USAJones, Jacob L.论文数: 0 引用数: 0 h-index: 0机构: North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
- [27] Recorded Ferroelectric Polarization Switching of Hf0.5Zr0.5O2 Capacitors Achieved by Thermal Rewake-up8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024, 2024, : 154 - 156Zhang, Zichong论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R China Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R ChinaYang, Yifan论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R China Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R ChinaSu, Rui论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R China Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R ChinaLin, Tonghui论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R China Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R ChinaMiao, Xiangshui论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R China Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan, Peoples R China Hubei Yangtze Memory Labs, Wuhan, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R ChinaWang, Xingsheng论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R China Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan, Peoples R China Hubei Yangtze Memory Labs, Wuhan, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R China
- [28] Ferroelectric Characterization in Ultrathin Hf0.5Zr0.5O2 MFIS Capacitors by Piezoresponse Force Microscopy (PFM) in Vacuum2021 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), 2021,Wu, Cheng-Hung论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, Taiwan Natl Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, Taiwan Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, Taiwan论文数: 引用数: h-index:机构:Wu, Tian-Li论文数: 0 引用数: 0 h-index: 0机构: Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, Taiwan Natl Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, Taiwan Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, TaiwanSu, Chun-Jung论文数: 0 引用数: 0 h-index: 0机构: Taiwan Semicond Res Inst, Hsinchu, Taiwan Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu, Taiwan
- [29] Effects of thickness scaling on the dielectric properties of Hf0.5Zr0.5O2 ferroelectric thin filmsJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (13)Hao, Puqi论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R ChinaLi, Huashan论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R ChinaZeng, Binjian论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R ChinaYang, Qijun论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710126, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R ChinaTang, Tianqi论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R ChinaZheng, Shuaizhi论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R ChinaPeng, Qiangxiang论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R ChinaLiao, Jiajia论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710126, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R ChinaZhang, Sirui论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710126, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R ChinaZhou, Yichun论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710126, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R ChinaLiao, Min论文数: 0 引用数: 0 h-index: 0机构: Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China Xiangtan Univ, Sch Mat Sci & Engn, Key Lab Low Dimens Mat & Applicat Technol, Minist Educ, Xiangtan 411105, Peoples R China
- [30] Effects of thickness scaling on the dielectric properties of Hf0.5Zr0.5O2 ferroelectric thin filmsJournal of Materials Science: Materials in Electronics, 2023, 34Puqi Hao论文数: 0 引用数: 0 h-index: 0机构: Xiangtan University,Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and EngineeringHuashan Li论文数: 0 引用数: 0 h-index: 0机构: Xiangtan University,Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and EngineeringBinjian Zeng论文数: 0 引用数: 0 h-index: 0机构: Xiangtan University,Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and EngineeringQijun Yang论文数: 0 引用数: 0 h-index: 0机构: Xiangtan University,Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and EngineeringTianqi Tang论文数: 0 引用数: 0 h-index: 0机构: Xiangtan University,Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and EngineeringShuaizhi Zheng论文数: 0 引用数: 0 h-index: 0机构: Xiangtan University,Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and EngineeringQiangxiang Peng论文数: 0 引用数: 0 h-index: 0机构: Xiangtan University,Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and EngineeringJiajia Liao论文数: 0 引用数: 0 h-index: 0机构: Xiangtan University,Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and EngineeringSirui Zhang论文数: 0 引用数: 0 h-index: 0机构: Xiangtan University,Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and EngineeringYichun Zhou论文数: 0 引用数: 0 h-index: 0机构: Xiangtan University,Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and EngineeringMin Liao论文数: 0 引用数: 0 h-index: 0机构: Xiangtan University,Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering