Recorded Ferroelectric Polarization Switching of Hf0.5Zr0.5O2 Capacitors Achieved by Thermal Rewake-up

被引：0
|
作者：
Zhang, Zichong [1 ,2 ]
Yang, Yifan [1 ,2 ]
Su, Rui [1 ,2 ]
Lin, Tonghui [1 ,2 ]
Miao, Xiangshui [1 ,2 ,3 ]
Wang, Xingsheng [1 ,2 ,3 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan, Peoples R China
[2] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan, Peoples R China
[3] Hubei Yangtze Memory Labs, Wuhan, Peoples R China
来源：
8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024 | 2024年
关键词：
Hf0.5Zr0.5O2 (HZO); polarization switching; thermal rewake-up" (TR) and oxygen vacancy;
D O I：
10.1109/EDTM58488.2024.10511655
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hf0.5Zr0.5O2 (HZO) capacitors are well prepared with excellent ferroelectricity, and recorded polarization switching (P-SW) = 30.5 mu C/cm(2) is achieved by the proposed "thermal rewake-up" (TR) operations and a large single orthorhombic phase (O-phase) grain in 40-nm long region has been demonstrated correspondingly. Oxygen diffusion region can be observed in HZO capacitors with TR operation. Meanwhile, the TR operation of ferroelectric enhancement shows no degradation of endurance of HZO capacitors, indicating the possibility to be widely used.
引用
收藏
页码：154 / 156
页数：3
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