High electron mobility transistor small signal model

被引：0

作者：

Yemtsev, PA ^{[1
]}

Sunduchkov, IK ^{[1
]}

Sunduchkov, KS ^{[1
]}

Shelkovnikov, BN ^{[1
]}

机构：

[1] Natl Tech Univ Ukraine, KPI, Kiev, Ukraine

来源：

14th International Crimean Conference: Microwave & Telecommunication Technology, Conference Proceedings | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ATF-36077 high electron mobility transistor small signal model is represented for booth packaged and unpackaged cases. Model parameter extraction procedure is presented. It is shown, that using the transistor withowt package gives a possibility to expand amplifier frequency range more than twice.

引用

页码：161 / 163

页数：3

共 50 条

[41] The transient and DC characteristics of a high electron mobility photo transistor
Pal, BB
[J]. SEMICONDUCTOR DEVICES, 1996, 2733 : 94 - 99
[42] Multi-objective optimization of the high electron mobility transistor
Amar, Abdelhamid
El Maani, Rabii
Radi, Bouchaïb
El Hami, Abdelkhalak
[J]. International Journal for Simulation and Multidisciplinary Design Optimization, 2023, 14
[43] Homodyne mixing at 150 GHz in a high electron mobility transistor
Ortolani, M.
Di Gaspare, A.
Giovine, E.
Evangelist, F.
Doria, A.
Giovenale, E.
Gallerano, G. P.
Messina, G.
Spassovsky, I.
Cetronio, A.
Lanzieri, C.
Peroni, M.
Foglietti, V.
[J]. 2008 33RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES, VOLS 1 AND 2, 2008, : 462 - +
[44] Evaluation of Internal Structure of GaN High Electron Mobility Transistor
Kato, Keiichiro
Yamamoto, Hidekazu
Satoh, Nobuo
[J]. IEEJ Transactions on Sensors and Micromachines, 2022, 142 (12) : 316 - 324
[45] AlGaN/GaN high electron mobility transistor (HEMT) reliability
Pavlidis, Dimitris
Valizadeh, Pouya
Hsu, S. H.
[J]. GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS, 2005, : 265 - 268
[46] Improved AlGaAs/InGaAs High-Electron Mobility Transistor
Lin, Y. S.
Liang, S. K.
[J]. 2011 INTERNATIONAL CONFERENCE ON ELECTRONICS, COMMUNICATIONS AND CONTROL (ICECC), 2011, : 2094 - 2096
[47] Small-signal and large-signal characteristics of resonant tunneling high electron mobility transistors (RTHEMTs)
Chen, KJ
[J]. 1997 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS I-III, 1997, : 529 - 532
[48] Modelling of GaN high electron mobility transistor on diamond substrate
Jarndal, Anwar
Du, Xuekun
Xu, Yuehang
[J]. IET MICROWAVES ANTENNAS & PROPAGATION, 2021, 15 (06) : 661 - 673
[49] A resonant terahertz detector utilizing a high electron mobility transistor
Lü, JQ
Shur, MS
Hesler, JL
Sun, LQ
Weikle, R
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 453 - 456
[50] A TRAVELING-WAVE HIGH-ELECTRON-MOBILITY TRANSISTOR
ANAND, MB
GHOSH, PK
KORNREICH, PG
NICHOLSON, DJ
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1993, 41 (04) : 624 - 631

← 1 2 3 4 5 →