Evaluation of Internal Structure of GaN High Electron Mobility Transistor

被引：0
|
作者：
Kato, Keiichiro [1 ]
Yamamoto, Hidekazu [1 ]
Satoh, Nobuo [1 ]
机构：
[1] Chiba Institute of Technology, 2-17-1, Tsudanuma, Chiba, Narashino,275-0016, Japan
来源：
IEEJ Transactions on Sensors and Micromachines | 2022年 / 142卷 / 12期
关键词：
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摘要：
High electron mobility transistors
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页码：316 / 324
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