Homodyne mixing at 150 GHz in a high electron mobility transistor

被引：0

作者：

Ortolani, M. ^{[1
]}

Di Gaspare, A. ^{[1
]}

Giovine, E. ^{[1
]}

Evangelist, F. ^{[1
]}

Doria, A. ^{[2
]}

Giovenale, E. ^{[2
]}

Gallerano, G. P. ^{[2
]}

Messina, G. ^{[2
]}

Spassovsky, I. ^{[2
]}

Cetronio, A. ^{[3
]}

Lanzieri, C. ^{[3
]}

Peroni, M. ^{[3
]}

Foglietti, V. ^{[1
]}

机构：

[1] CNR, Ist Foton & Nanotecnol, I-00156 Rome, Italy

[2] ENEA, Ctr Ricerche Frascati, I-00044 Frascati, Italy

[3] Selex Sistemi Integ, I-00156 Rome, Italy

来源：

2008 33RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

we explore the possibility of using an AlGaN/GaN high electron mobility transistor (HEMT) as a free-space coupled homodyne mixer. We used 150 GHz radiation from a Free Electron Laser, hence 5 times higher than the HEMT nominal band center at 30 GHz. The homodyne mixing provides a quasi-dc output signal, which makes the HEMT a detector of the radiation at 150 GHz.

引用

页码：462 / +

页数：2

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