Negative bias temperature instability and relaxation in HfSiON gate stack field effect devices

被引：0

作者：

Devine, R. A. B. ^{[1
]}

Hjalmarson, H. P. ^{[2
]}

Alshareef, H. N. ^{[3
]}

Quevedo-Lopez, M. ^{[3
]}

机构：

[1] New Mexico Inst Min & Technol, EMRTC, Socorro, NM 87801 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Univ Texas Richardson, Dept Mat Sci & Engn, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

关键词：

D O I：

10.1063/1.2912025

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Negative bias temperature instability and relaxation measurements have been performed on HfSiON gate stack devices. The time exponent for threshold voltage shift evolution is observed to be temperature dependent. The dominant source of the positive charge induced threshold voltage variation is determined to be dielectric trapped charge and this is the source of variation during relaxation. Nonlinear threshold voltage shift versus inversion channel carrier mobility is observed. Its magnitude is inconsistent with expectations from existing models. (C) 2008 American Institute of Physics.

引用

页数：3

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