Pulse stress frequency dependence of negative bias temperature instability in SiON gate transistors

被引：7

作者：

Yang, Jingfeng ^{[1
]}

Yang, Jiaqi ^{[1
]}

Yan, Baoguang ^{[1
]}

Du, Gang ^{[1
]}

Liu, Xiaoyan ^{[1
]}

Han, Ruqi ^{[1
]}

Kang, Jinfeng ^{[1
]}

Liao, C. C. ^{[2
]}

Gan, Z. H. ^{[2
]}

Liao, M. ^{[2
]}

Wang, J. P. ^{[2
]}

Wong, W. ^{[2
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] Semicond Mfg Int Corp, Shanghai 201203, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 08期

关键词：

deep levels; dielectric materials; electron traps; insulated gate field effect transistors; interface states; reliability; silicon compounds; NBTI; GENERATION; MOSFETS; IMPACT;

D O I：

10.1063/1.3079406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dependence of negative bias temperature instability (NBTI) on the frequency of the pulsed stress applied on p-channel transistors with plasma nitrided SiON gate dielectrics is studied. The threshold voltage shift (Delta V-th) decrease is observed with increase in frequency. The fractional relaxation is found to be more remarkable after a pulse stress with higher frequency. A phenomenological model based on the dispersive transport of hydrogen in the gate dielectrics is proposed to explain the pulse based NBTI characteristics. The frequency dependence of NBTI is attributed to the existence of deep level hydrogen traps in the gate dielectrics. The model predicts reduced frequency dependence in the ultrahigh frequency range. The results and discussion also confirm the overall correctness of the dispersive transport framework in interpreting the NBTI mechanisms.

引用

页数：3

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