Multilevel resistance switching phenomena observed in the Cu (Ti)/HfO2/Au device

被引：0
|
作者：
Yoshida, Hayato [1 ]
Shimizu, Tomohiro [1 ]
Ito, Takeshi [1 ]
Shingubara, Shoso [1 ]
机构：
[1] Kansai Univ, Grad Sch Sci & Engn, Suita, Osaka 5648680, Japan
来源：
2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2017年
关键词：
ReRAM; HfO2; Multilevel switching;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Memory devices having multiple resistance states is promising for increase of memory capacity as well as realizing higher functionality. In this study, we studied multiple resistance states appearing in the reset operation mode in the Cu/HfO2/Au and Ti/HfO2/Au ReRAM devices. Both devices showed bipolar resistance switching property. Ti/HfO2/Au device showed multiple resistance states strictly dependent on the amount of reset voltage, on the other hand, resistance of Cu/HfO2/Au device did not show clear dependence on the reset voltage.
引用
收藏
页码：70 / 71
页数：2
相关论文
共 50 条
  • [31] Thermal dependence of the resistance of TiN/Ti/HfO2/Pt memristors
    Jimenez-Molinos, F.
    Vinuesa, G.
    Garcia, H.
    Tarre, A.
    Tamm, A.
    Kalam, K.
    Kukli, K.
    Duenas, S.
    Castan, H.
    Gonzalez, M. B.
    Campabadal, F.
    Maldonado, D.
    Cantudo, A.
    Roldan, J. B.
    2023 14TH SPANISH CONFERENCE ON ELECTRON DEVICES, CDE, 2023,
  • [32] Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO2/Ti RRAM Device via Post Annealing Process
    Jang, Yuseong
    Hwang, Chanmin
    Bang, Sanggyu
    Kim, Hee-Dong
    INORGANICS, 2024, 12 (12)
  • [33] Highly repeatable multilevel resistive switching characteristics of an Au/TiO2/Ti memory device
    Acharyya, D.
    Hazra, A.
    Dutta, K.
    Gupta, R. K.
    Bhattacharyya, P.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (12)
  • [34] Charge transport and bipolar switching mechanism in a Cu/HfO2/Pt resistive switching cell
    谭婷婷
    郭婷婷
    吴志会
    刘正堂
    Chinese Physics B, 2016, 25 (11) : 480 - 483
  • [35] Charge transport and bipolar switching mechanism in a Cu/HfO2/Pt resistive switching cell
    Tan, Tingting
    Guo, Tingting
    Wu, Zhihui
    Liu, Zhengtang
    CHINESE PHYSICS B, 2016, 25 (11)
  • [36] Enhanced resistive switching behaviors of HfO2:Cu film with annealing process
    Guo, Tingting
    Tan, Tingting
    Liu, Zhengtang
    VACUUM, 2015, 114 : 78 - 81
  • [37] Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications
    Wang, Yan
    Liu, Qi
    Long, Shibing
    Wang, Wei
    Wang, Qin
    Zhang, Manhong
    Zhang, Sen
    Li, Yingtao
    Zuo, Qingyun
    Yang, Jianhong
    Liu, Ming
    NANOTECHNOLOGY, 2010, 21 (04)
  • [38] Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack
    Feng, Xuan
    Dong, Shurong
    Wong, Hei
    Yu, Danqun
    Pey, K. L.
    Shubhakar, K.
    Lau, W. S.
    MICROELECTRONICS RELIABILITY, 2016, 61 : 78 - 81
  • [39] Multilevel Conductance Switching of a HfO2 RRAM Array Induced by Controlled Filament for Neuromorphic Applications
    Woo, Jiyong
    Song, Jeonghwan
    Moon, Kibong
    Lee, Sangheon
    Park, Jaesung
    Hwang, Hyunsang
    2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), 2016, : 40 - 41
  • [40] The Heavy Ion Radiation effects on the Pt/HfO2/Ti Resistive Switching Memory
    Wang, Yan
    Li, Yang
    Liu, Qi
    Bi, Jinshun
    Liu, Jing
    Sun, Haitao
    Lv, Hangbing
    Long, Shibing
    Xi, Kai
    Liu, Ming
    2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2016,
12345