Charge transport and bipolar switching mechanism in a Cu/HfO2/Pt resistive switching cell

被引：12
|
作者：
Tan, Tingting [1 ]
Guo, Tingting [1 ]
Wu, Zhihui [1 ]
Liu, Zhengtang [1 ]
机构：
[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
来源：
CHINESE PHYSICS B | 2016年 / 25卷 / 11期
关键词：
HfO2; film; resistive switching mechanism; chemical structure; MEMORIES;
D O I：
10.1088/1674-1056/25/11/117306
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Bipolar resistance switching characteristics are investigated in Cu/sputtered-HfO2/Pt structure in the application of resistive random access memory (RRAM). The conduction mechanism of the structure is characterized to be SCLC conduction. The dependence of resistances in both high resistance state (HRS) and low resistance state (LRS) on the temperature and device area are studied. Then, the composition and chemical bonding state of Cu and Hf at Cu/HfO2 interface region are analyzed by x-ray photoelectron spectroscopy (XPS). Combining the electrical characteristics and the chemical structure at the interface, a model for the resistive switching effect in Cu/HfO2/Pt stack is proposed. According to this model, the generation and recovery of oxygen vacancies in the HfO2 film are responsible for the resistance change.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Charge transport and bipolar switching mechanism in a Cu/HfO2/Pt resistive switching cell
    谭婷婷
    郭婷婷
    吴志会
    刘正堂
    [J]. Chinese Physics B, 2016, 25 (11) : 480 - 483
  • [2] Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory
    Zhang, Meiyun
    Long, Shibing
    Wang, Guoming
    Liu, Ruoyu
    Xu, Xiaoxin
    Li, Yang
    Xu, Dinlin
    Liu, Qi
    Lv, Hangbing
    Miranda, Enrique
    Sune, Jordi
    Liu, Ming
    [J]. NANOSCALE RESEARCH LETTERS, 2014, 9
  • [3] Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory
    Meiyun Zhang
    Shibing Long
    Guoming Wang
    Ruoyu Liu
    Xiaoxin Xu
    Yang Li
    Dinlin Xu
    Qi Liu
    Hangbing Lv
    Enrique Miranda
    Jordi Suñé
    Ming Liu
    [J]. Nanoscale Research Letters, 9
  • [4] Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell
    Jeong, Doo Seok
    Schroeder, Herbert
    Waser, Rainer
    [J]. PHYSICAL REVIEW B, 2009, 79 (19):
  • [5] On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO2\Pt Memory Systems
    Goux, L.
    Chen, Y. -Y
    Pantisano, L.
    Wang, X. -P.
    Groeseneken, G.
    Jurczak, M.
    Wouters, D. J.
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2010, 13 (06) : G54 - G56
  • [6] Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt resistive random access memory cell
    Pang Hua
    Deng Ning
    [J]. ACTA PHYSICA SINICA, 2014, 63 (14)
  • [7] Resistive switching characteristics of HfO2 based bipolar nonvolatile RRAM cell
    Lata, Lalit Kumar
    Jain, Praveen K.
    Chand, Umesh
    Bhatia, Deepak
    Shariq, Mohammad
    [J]. MATERIALS TODAY-PROCEEDINGS, 2020, 30 : 217 - 220
  • [8] Enhanced bipolar resistive switching of HfO2 with a Ti interlayer
    DooSung Lee
    YongHun Sung
    InGun Lee
    JongGi Kim
    Hyunchul Sohn
    Dae-Hong Ko
    [J]. Applied Physics A, 2011, 102 : 997 - 1001
  • [9] Enhanced bipolar resistive switching of HfO2 with a Ti interlayer
    Lee, DooSung
    Sung, YongHun
    Lee, InGun
    Kim, JongGi
    Sohn, Hyunchul
    Ko, Dae-Hong
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 102 (04): : 997 - 1001
  • [10] Large resistive switching in Pt/BNT/HfO2/Pt capacitors
    Song, H. J.
    Wang, J. B.
    Zhong, X. L.
    Cheng, J. J.
    Zhong, G. K.
    [J]. RSC ADVANCES, 2014, 4 (92) : 50891 - 50896
12345