Multilevel resistance switching phenomena observed in the Cu (Ti)/HfO2/Au device

被引：0
|
作者：
Yoshida, Hayato [1 ]
Shimizu, Tomohiro [1 ]
Ito, Takeshi [1 ]
Shingubara, Shoso [1 ]
机构：
[1] Kansai Univ, Grad Sch Sci & Engn, Suita, Osaka 5648680, Japan
来源：
2017 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) | 2017年
关键词：
ReRAM; HfO2; Multilevel switching;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Memory devices having multiple resistance states is promising for increase of memory capacity as well as realizing higher functionality. In this study, we studied multiple resistance states appearing in the reset operation mode in the Cu/HfO2/Au and Ti/HfO2/Au ReRAM devices. Both devices showed bipolar resistance switching property. Ti/HfO2/Au device showed multiple resistance states strictly dependent on the amount of reset voltage, on the other hand, resistance of Cu/HfO2/Au device did not show clear dependence on the reset voltage.
引用
收藏
页码：70 / 71
页数：2
相关论文
共 50 条
  • [21] Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory
    Zhang, Meiyun
    Long, Shibing
    Wang, Guoming
    Liu, Ruoyu
    Xu, Xiaoxin
    Li, Yang
    Xu, Dinlin
    Liu, Qi
    Lv, Hangbing
    Miranda, Enrique
    Sune, Jordi
    Liu, Ming
    NANOSCALE RESEARCH LETTERS, 2014, 9
  • [22] The effect of Cu doping concentration on resistive switching of HfO2 film
    Guo, Tingting
    Tan, Tingting
    Liu, Zhengtang
    APPLIED SURFACE SCIENCE, 2015, 351 : 704 - 708
  • [23] Resistance switching in HfO2 metal-insulator-metal devices
    Gonon, P.
    Mougenot, M.
    Vallee, C.
    Jorel, C.
    Jousseaume, V.
    Grampeix, H.
    El Kamel, F.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (07)
  • [24] Stress-Induced Resistive Switching in Pt/HfO2/Ti Devices
    Gilad Zeevi
    Alexander Katsman
    Yuval E. Yaish
    Journal of Electronic Materials, 2018, 47 : 1505 - 1511
  • [25] Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device
    Kim, Gil Seop
    Park, Tae Hyung
    Kim, Hae Jin
    Ha, Tae Jung
    Park, Woo Young
    Kim, Soo Gil
    Hwang, Cheol Seong
    JOURNAL OF APPLIED PHYSICS, 2018, 124 (02)
  • [26] Low power Resistive Switching Phenomena in Ti/SiN/Au Memory Device
    Lei, Xiaoyi
    Dai, Yang
    Liu, Zhuqing
    Yan, Junfeng
    Zhao, Wu
    Zhang, Zhiyong
    2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,
  • [27] A two-terminal binary HfO2 resistance switching random access memory for an artificial synaptic device
    Chen, Xiaozhang
    Lv, You
    Tian, Zhaobo
    Yang, Jingxi
    Zhu, Yuan
    Su, Longxing
    JOURNAL OF MATERIALS CHEMISTRY C, 2023, 11 (02) : 622 - 629
  • [28] Stress-Induced Resistive Switching in Pt/HfO2/Ti Devices
    Zeevi, Gilad
    Katsman, Alexander
    Yaish, Yuval E.
    JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (02) : 1505 - 1511
  • [29] Resistive switching behavior of HfO2 film with different Ti doping concentrations
    Guo, Tingting
    Tan, Tingting
    Liu, Zhengtang
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (04)
  • [30] Resistive Switching with Bipolar Characteristics in TiN/Ti/HfO2/W Devices
    Poblador, S.
    Acero, M. C.
    Gonzalez, M. B.
    Campabadal, F.
    2017 SPANISH CONFERENCE ON ELECTRON DEVICES (CDE), 2017,
12345