As-grown Ge pin Photodiodes on Si with Low Dark Current Achieved by Hydrogen Desorption Technique

被引：0

作者：

Takada, Yoichi ^{[1
]}

Suzuki, Ryota ^{[1
]}

Park, Sungbong ^{[1
]}

Osaka, Jiro ^{[1
]}

Ishikawa, Yasuhiko ^{[1
]}

Wada, Kazumi ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

2010 7TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) | 2010年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

As-grown Ge pin photodiodes on Si with a low dark current (4.6 x 10-2 A/cm(2) at -1 V) are achieved using a hydrogen desorption technique. This technique should enable the use of Ge in the CMOS backend process.

引用

页码：266 / 268

页数：3

共 31 条

[21] Low Dark Current Ge PIN Photodiode for a High-Performance, Photonic BiCMOS Process for Radio-over-Fiber Applications
Lischke, S.
Knoll, D.
Zimmermann, L.
Yamamoto, Y.
Fraschke, M.
Trusch, A.
Krueger, A.
Kroh, M.
Tillack, B.
2012 IEEE PHOTONICS CONFERENCE (IPC), 2012, : 628 - +
[22] Lateral separate absorption charge multiplication Ge-on-Si avalanche photodiode with low dark current in linear mode
Li, Yuxuan
Liu, Xiaobin
Li, Xuetong
Zhang, Lanxuan
Li, Yingzhi
Chen, Baisong
Zhi, Zihao
Gao, Fengli
Li, Xueyan
Guo, Pengfei
Luo, Xianshu
Lo, Guoqiang
Song, Junfeng
OPTICS COMMUNICATIONS, 2022, 518
[23] VERY LOW DARK CURRENT AND HIGH QUANTUM EFFICIENT INGAAS/INP P-I-N PHOTODIODES GROWN BY CHEMICAL-BEAM EPITAXY
TSANG, WT
CAMPBELL, JC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1862 - 1862
[24] Improved Si0.5Ge0.5/Si interface quality achieved by the process of low energy hydrogen plasma cleaning and investigation of interface quality with positron annihilation spectroscopy
Liao, M. -H.
Chen, C. -H.
AIP ADVANCES, 2013, 3 (04)
[25] VERY LOW DARK CURRENT AND HIGH QUANTUM EFFICIENT InGaAs/InP P-I-N PHOTODIODES GROWN BY CHEMICAL-BEAM EPITAXY.
Tsang, W.T.
Campbell, J.C.
1862, (ED-33):
[26] Observation of sharp current peaks in resonant tunneling diode with strained Si0.6Ge0.4/Si(100) grown by low-temperature low-pressure CVD
Han, P
Sakuraba, M
Jeong, YC
Bock, K
Matsuura, T
Murota, J
JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 315 - 320
[27] Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy
Liu, JP
Huang, DD
Li, JP
Lin, YX
Sun, DZ
Kong, MY
JOURNAL OF APPLIED PHYSICS, 1999, 85 (09) : 6920 - 6922
[28] High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation
Marzieh Bakhtiary-Noodeh
Minkyu Cho
Hoon Jeong
Zhiyu Xu
Chuan-Wei Tsou
Can Cao
Shyh-Chiang Shen
Theeradetch Detchprohm
Russell D. Dupuis
Journal of Electronic Materials, 2021, 50 : 4462 - 4468
[29] High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation
Bakhtiary-Noodeh, Marzieh
Cho, Minkyu
Jeong, Hoon
Xu, Zhiyu
Tsou, Chuan-Wei
Cao, Can
Shen, Shyh-Chiang
Detchprohm, Theeradetch
Dupuis, Russell D.
JOURNAL OF ELECTRONIC MATERIALS, 2021, 50 (08) : 4462 - 4468
[30] Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4
Beeler, R. T.
Xu, Chi
Smith, D. J.
Grzybowski, G.
Menendez, J.
Kouvetakis, J.
APPLIED PHYSICS LETTERS, 2012, 101 (22)

← 1 2 3 4 →