Low Dark Current Ge PIN Photodiode for a High-Performance, Photonic BiCMOS Process for Radio-over-Fiber Applications

被引：0
|
作者：
Lischke, S. [1 ]
Knoll, D. [1 ]
Zimmermann, L. [1 ]
Yamamoto, Y. [1 ]
Fraschke, M. [1 ]
Trusch, A. [1 ]
Krueger, A. [1 ]
Kroh, M. [3 ]
Tillack, B. [1 ,2 ]
机构：
[1] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany
[2] Tech Univ Berlin, D-HFT4 Berlin 10587, Germany
[3] U2t Photon AG, D-10553 Berlin, Germany
来源：
2012 IEEE PHOTONICS CONFERENCE (IPC) | 2012年
关键词：
Ge photodiode; BiCMOS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A waveguide coupled Ge PIN photodiode showing 0.7A/W responsivity and 13GHz optical bandwidth at a low dark current of 12mA/cm(2) is presented. Its unique features facilitate integration in a high-performance, photonic BiCMOS process.
引用
收藏
页码：628 / +
页数：2
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