Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors

被引：0
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作者：
Chu, Kuei-Yi [1 ]
Cheng, Shiou-Ying [1 ]
Chen, Tzu-Pin [1 ]
Chen, Li-Yang [1 ]
Tsai, Tsung-Han [1 ]
Tsai, Jung-Hui [1 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan
来源：
EXTENDED ABSTRACTS 2008 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY | 2008年
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T [工业技术];
学科分类号：
08 ;
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页码：176 / 178
页数：3
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