EMITTER EXCESS RESISTANCE IN GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：0
|
作者：
CAMPS, T
MARTY, A
TASSELLI, J
CAZARRE, A
BAILBE, JP
机构：
[1] Laboratoire d'Automatique et d'Analyse des Systèmes, C.N.R.S., 31077 Toulouse Cedex, 7, Avenue du Colonel Roche
来源：
SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 12期
关键词：
D O I：
10.1016/0038-1101(94)90056-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Numerous studies have shown the influence of parasitic elements, particularly emitter access resistance and inductance, on HBTs DC and dynamic performances. Instead the achievement of low specific contact resistances, the apparent emitter resistance presents high values. To explain this discrepancy the longitudinal distribution of the emitter current has been investigated by using a distributed DC-model, taking into account the metal layers resistance of the different contacts. Thus it is shown that only the emitter contact parameters act on the non equipotentiality along the structure.
引用
收藏
页码：1907 / 1911
页数：5
相关论文
共 50 条
  • [1] GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS WITH ABRUPT EMITTER BASE INTERFACE FOR BALLISTIC OPERATION
    ANKRI, D
    SCHAFF, W
    WOOD, CEC
    EASTMAN, LF
    WOODARD, DW
    RATHBUN, L
    [J]. INSTITUTE OF PHYSICS CONFERENCE SERIES, 1983, (65): : 431 - 438
  • [2] EMITTER-BASE BANDGAP GRADING EFFECTS ON GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    YOSHIDA, J
    KURATA, M
    OBARA, M
    MORIZUKA, K
    MASHITA, M
    HOJO, A
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1979 - 1979
  • [3] COMPARISON OF GAINP/GAAS HETEROSTRUCTURE-EMITTER BIPOLAR-TRANSISTORS AND HETEROJUNCTION BIPOLAR-TRANSISTORS
    YANG, YF
    HSU, CC
    YANG, ES
    CHEN, YK
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (07) : 1210 - 1215
  • [4] GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - ISSUES AND PROSPECTS FOR APPLICATION
    ASBECK, PM
    CHANG, MCF
    HIGGINS, JA
    SHENG, NH
    SULLIVAN, GJ
    WANG, KC
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) : 2032 - 2042
  • [5] NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    ASBECK, PM
    MILLER, DL
    ASATOURIAN, R
    KIRKPATRICK, CG
    [J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 403 - 406
  • [6] ELECTRICAL BEHAVIOR OF DOUBLE HETEROJUNCTION NPN GAALAS/GAAS/GAALAS BIPOLAR-TRANSISTORS
    BAILBE, JP
    MARTY, A
    REY, G
    TASSELLI, J
    BOUYAHYAOUI, A
    [J]. SOLID-STATE ELECTRONICS, 1985, 28 (06) : 627 - 638
  • [7] FABRICATION AND DC CHARACTERIZATION OF GAALAS/GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS
    MARTY, A
    JAMAI, J
    VANNEL, JP
    FABRE, N
    BAILBE, JP
    DUHAMEL, N
    DUBONCHEVALLIER, C
    TASSELLI, J
    [J]. SOLID-STATE ELECTRONICS, 1988, 31 (09) : 1375 - 1382
  • [8] EMITTER REGION DELAY TIME OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    GAO, GB
    CHYI, JI
    CHEN, J
    MORKOC, H
    [J]. SOLID-STATE ELECTRONICS, 1990, 33 (03) : 389 - 390
  • [9] COMPOSITIONALLY GRADED EMITTER INGA(AS)P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    ITO, H
    NITTONO, T
    WATANABE, N
    ISHIBASHI, T
    [J]. ELECTRONICS LETTERS, 1994, 30 (25) : 2174 - 2175
  • [10] VERIFICATION OF THE CHARGE-CONTROL MODEL FOR GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    TASSELLI, J
    MARTY, A
    BAILBE, JP
    REY, G
    [J]. SOLID-STATE ELECTRONICS, 1986, 29 (09) : 919 - 923
12345