Influence of emitter ledge width on the characteristics of InGaP/GaAs heterojunction bipolar transistors

被引：0
|
作者：
Chu, Kuei-Yi [1 ]
Cheng, Shiou-Ying [1 ]
Chen, Tzu-Pin [1 ]
Chen, Li-Yang [1 ]
Tsai, Tsung-Han [1 ]
Tsai, Jung-Hui [1 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan
来源：
EXTENDED ABSTRACTS 2008 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY | 2008年
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：176 / 178
页数：3
相关论文
共 50 条
  • [31] Si-related defects in InGaP/GaAs heterojunction bipolar transistors
    Yamada, Hisashi
    Fukuhara, Noboru
    Hata, Masahiko
    PHYSICA B-CONDENSED MATTER, 2007, 401 : 44 - 47
  • [32] CRITICAL PASSIVATION LEDGE THICKNESS IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    LIU, W
    HARRIS, JS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (01): : 6 - 9
  • [33] A novel technology to form self-aligned emitter ledge for heterojunction bipolar transistors
    Wang, H
    Ng, GI
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (10) : 628 - 630
  • [34] Hydrogen-related defects in InGaP/GaAs heterojunction bipolar transistors
    Yamada, Hisashi
    Fukuhara, Noboru
    Hata, Masahiko
    Akimoto, Katsuhiro
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 5223 - 5226
  • [35] Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors
    Baca, AG
    Monier, C
    Chang, PC
    Briggs, RD
    Armendariz, MG
    Pearton, SJ
    SOLID-STATE ELECTRONICS, 2002, 46 (06) : 797 - 801
  • [36] Fabrication and characterization of InGaP/GaAs heterojunction bipolar transistors on GOI substrates
    Thomas, SG
    Johnson, ES
    Tracy, C
    Maniar, P
    Li, XL
    Roof, B
    Hartmann, Q
    Ahmari, DA
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (07) : 438 - 440
  • [37] Characterization of InGaP/GaAs heterojunction bipolar transistors with a heavily doped base
    Oka, T
    Ouchi, K
    Mochizuki, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (9A): : 5221 - 5226
  • [38] Optical and electrical characteristics of InGaP/AlGaAs/GaAs composite emitter heterojunction bipolar/phototransistors (CEHBTs/CEHPTs)
    Tan, SW
    Chen, WT
    Chu, MY
    Lour, WS
    SUPERLATTICES AND MICROSTRUCTURES, 2003, 33 (04) : 209 - 216
  • [39] Improvement of reliability of GaAs HBT with InGaP ledge emitter structure
    Song, CK
    Choi, PJ
    Kim, DY
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 33 : S370 - S373
  • [40] Surface recombination current in InGaP/GaAs heterostructure-emitter bipolar transistors
    Yang, Y.F., 1600, (41):
12345