Planar cold cathode based on a multilayer-graphene/SiO2/Si heterodevice

被引：6
|
作者：
Nishiguchi, Katsuhiko [1 ]
Yoshizumi, Daisuke [2 ]
Sekine, Yoshiaki [1 ]
Furukawa, Kazuaki [1 ,3 ]
Fujiwara, Akira [1 ]
Nagase, Masao [2 ]
机构：
[1] NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[2] Univ Tokushima, Tokushima 7708506, Japan
[3] Meisei Univ, Hino, Tokyo 1918509, Japan
来源：
APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 10期
关键词：
HOT-ELECTRON TRANSISTOR; FIELD-EMISSION; TRANSPARENT ELECTRODES; GRAPHENE TRANSISTORS; CARBON; FILMS; NANOTUBES; LAYER; OXIDE;
D O I：
10.7567/APEX.9.105101
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated a planar cold cathode based on a multilayer (ML)-graphene/SiO2/Si heterostructure. When voltage is applied between the ML graphene and Si layer, electrons tunnel from the Si layer to the ML-graphene through the SiO2. During this tunneling event, electrons repeatedly gain and lose energy in the SiO2 owing to the electric field and scattering, respectively. Electrons whose energy is larger than the work function of the ML-graphene are emitted from its surface to a vacuum. The thinness of the ML-graphene reduces the energy loss of electrons in it and thus improves electron emission characteristics. (C) 2016 The Japan Society of Applied Physics
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页数：4
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