Planar cold cathode based on a multilayer-graphene/SiO2/Si heterodevice

被引：6

作者：

Nishiguchi, Katsuhiko ^{[1
]}

Yoshizumi, Daisuke ^{[2
]}

Sekine, Yoshiaki ^{[1
]}

Furukawa, Kazuaki ^{[1
,3
]}

Fujiwara, Akira ^{[1
]}

Nagase, Masao ^{[2
]}

机构：

[1] NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Univ Tokushima, Tokushima 7708506, Japan

[3] Meisei Univ, Hino, Tokyo 1918509, Japan

来源：

APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 10期

关键词：

HOT-ELECTRON TRANSISTOR; FIELD-EMISSION; TRANSPARENT ELECTRODES; GRAPHENE TRANSISTORS; CARBON; FILMS; NANOTUBES; LAYER; OXIDE;

D O I：

10.7567/APEX.9.105101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated a planar cold cathode based on a multilayer (ML)-graphene/SiO2/Si heterostructure. When voltage is applied between the ML graphene and Si layer, electrons tunnel from the Si layer to the ML-graphene through the SiO2. During this tunneling event, electrons repeatedly gain and lose energy in the SiO2 owing to the electric field and scattering, respectively. Electrons whose energy is larger than the work function of the ML-graphene are emitted from its surface to a vacuum. The thinness of the ML-graphene reduces the energy loss of electrons in it and thus improves electron emission characteristics. (C) 2016 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[41] Study of Cu diffusion in Cu/TaN/SiO2/Si multilayer structures
Zhang, DH
Loh, SW
Li, CY
Foo, PD
Xie, J
Liu, R
Wee, ATS
Zhang, L
Lee, YK
SURFACE REVIEW AND LETTERS, 2001, 8 (05) : 527 - 532
[42] RBS study of multilayer structure material of Si/SiO2 nano films
Roumie, M.
Abboudy, S.
Al Sabbagh, M.
Abu-Safe, H. H.
Soueidan, M.
Nsouli, B.
ADVANCES IN INNOVATIVE MATERIALS AND APPLICATIONS, 2011, 324 : 310 - +
[43] Influence of irradiation with swift heavy ions on multilayer Si/SiO2 heterostructures
G. A. Kachurin
S. G. Cherkova
D. V. Marin
V. A. Volodin
A. G. Cherkov
A. Kh. Antonenko
G. N. Kamaev
V. A. Skuratov
Semiconductors, 2013, 47 : 358 - 364
[44] Size effects on the luminescence spectrum in amorphous Si/SiO2 multilayer structures
Kanemitsu, Y
Kushida, T
APPLIED PHYSICS LETTERS, 2000, 77 (22) : 3550 - 3552
[45] Topographic change at the SiO2/Si interface with multilayer oxidation for various temperatures
Hojo, D
Tokuda, N
Yamabe, K
HIGH PURITY SILICON VII, PROCEEDINGS, 2002, 2002 (20): : 258 - 265
[46] Study on SiNx passivated Cu/Ta/SiO2/Si multilayer structure
K. M. Latt
H. S. Park
H. L. Seng
T. Osipowicz
Y. K. Lee
Journal of Materials Science, 2002, 37 : 4181 - 4188
[47] Topography change due to multilayer oxidation at SiO2/Si(111) interfaces
Hojo, Daisuke
Oeda, Hitoshi
Tokuda, Norio
Yamabe, Kikuo
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2003, 42 (4 B): : 1903 - 1906
[48] Temperature-Dependent Optical Properties of Graphene on Si and SiO2/Si Substrates
Wu, Sisi
Wan, Lingyu
Wei, Liangmin
Talwar, Devki N.
He, Kaiyan
Feng, Zhechuan
CRYSTALS, 2021, 11 (04):
[49] Photoluminescence of Si/SiO2 and SiNx/SiO2 multilayers
Institute of Solid State Physics, School of Physics and Electronic Engineering, Sichuan Normal University, Chengdu 610068, China
不详
Bandaoti Guangdian, 2007, 5 (680-684):
[50] Analyses of the As doping of SiO2/Si/SiO2 nanostructures
Ruffino, Francesco
Tomasello, Mario Vincenzo
Miritello, Maria
De Bastiani, Riccardo
Nicotra, Giuseppe
Spinella, Corrado
Grimaldi, Maria Grazia
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 3, 2011, 8 (03): : 863 - 866

← 1 2 3 4 5 →