Characteristics of graphene/4H-SiC/graphene photodetector based on hydrogenated multilayer-graphene electrode

被引：7
|
作者：
Sun, Cunzhi [1 ]
Cai, Weiwei [1 ,2 ,3 ]
Hong, Rongdun [1 ,2 ]
Cai, Jiafa [1 ,2 ]
Wu, Zhengyun [1 ,2 ,3 ]
机构：
[1] Xiamen Univ, Dept Phys, Xiamen, Peoples R China
[2] Xiamen Univ, Jiujiang Res Inst, Jiujiang, Peoples R China
[3] Xiamen Univ, Fujian Key Lab Semicond Mat & Applicat, Xiamen, Peoples R China
来源：
JOURNAL OF NANOPHOTONICS | 2019年 / 13卷 / 01期
关键词：
grapheme; 4H-SiC; Schottky contact; hydrogenation; EPITAXIAL GRAPHENE; BANDGAP;
D O I：
10.1117/1.JNP.13.016013
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
By utilizing a Joule heating decomposition method, hydrogenated multilayer graphene (MLG) has been grown on the surface of a semi-insulation 4H-SiC epitaxial layer. The Raman spectra have indicated that the sublimation speed of Si atoms, which corresponds positively to the Joule heat, had great influence on the hydrogenation degree and the layer number of the MLG. Then, a graphene/4H-SiC/graphene photodetector was fabricated and studied, showing hydrogenation-dependent dark current and photocurrent, depicting the influence of hydrogenation degree and the layer number on the Schottky barrier high (varying from 0.59 to 0.99 eV). Moreover, the sheet resistance of MLG and the specific contact resistance of graphene/Cr/Au came out to be similar to 3.2 k Omega/sq and 7.5 x 10(-3) Omega . cm(2). (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE)
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页数：8
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