New Al Post-Etch Residue Remover with Al Surface Passivation Function

被引：0

作者：

Wei, Joyce C. Y. ^{[1
]}

Huang, Micky ^{[1
]}

机构：

[1] DuPont Elect & Commun, EKC Technol, Hsinchu 30078, Taiwan

来源：

CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2011 (CSTIC 2011) | 2011年 / 34卷 / 01期

关键词：

ALUMINUM;

D O I：

10.1149/1.3567601

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new Al post-etch residue remover with Al surface passivation function was developed. It is capable of removing polymer and inorganic residues with good compatibility to thin Aluminum, TiN, TaN, NiSi, and various silicon oxide films. A monolayer of passivation on the Al surface can be deposited in situ to prevent further oxidation and corrosion of the thin Al film. The passivation layer can be easily removed by a short plasma clean or baking to prepare the pristine Al surface for the successive processes. This solution is recommended for cleaning in FEOL high k/metal gate processes and contacts.

引用

页码：343 / 348

页数：6

共 50 条

[31] Passivation of Al/Si interface by chemical treatment:: Schottky barrier height and plasma etch induced defects
Horváth, ZJ
Adám, M
Godio, P
Borionetti, G
Szabó, I
Gombia, E
Van Tuyen, V
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 255 - 258
[32] Surface Analysis of TMCTS-Based SiOC(H) Low-k Dielectrics in Post-Etch Strip of ACL Hardmask
Park, Min Kyu
Song, Wan Soo
Kim, Min Ho
Hong, Sang Jeen
MATERIALS, 2021, 14 (05) : 1 - 12
[33] Impact of Dry Etch and Ash Conditions on Removability of Plasma Etch Residues in Al-Metallization. Approach to improve PER Cleaning Efficiency by EHS-friendly Aqueous Remover
Ferstl, Berthold
Klipp, Andreas
Essig, Manfred
Heidenblut, Maria
ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES IX: UCPSS 2008-9TH INTERNATIONAL SYMPOSIUM ON ULTRA CLEAN PROCESSING OF SEMICONDUCTOR SURFACES (UCPSS), 2009, 145-146 : 353 - +
[34] New post etch polymer removal process for Al-interconnects and vias in tank and spray tools using a new inorganic chemistry
Mellies, R
Kunz, S
Nilius, F
Mayer, D
Kühner, A
ULTRA CLEAN PROCESSING OF SILICON SURFACES VII, 2005, 103-104 : 381 - 383
[35] Dual Function of Antireflectance and Surface Passivation of Atomic-Layer-Deposited Al2O3 Films
Zhu, Li Qiang
Li, Xiang
Yan, Zhong Hui
Zhang, Hong Liang
Wan, Qing
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (12) : 1753 - 1755
[36] Surface oxidation of Al masks for deep dry-etch of silica optical waveguides
Li, Wei-Tang
Bulla, D. A. P.
Boswell, Rod
SURFACE & COATINGS TECHNOLOGY, 2007, 201 (9-11): : 4979 - 4983
[37] The stand-by current performance improvement by reducing post-etch Cu-F residue to prevent Cu extrusion for 28nm-node Cu interconnect and beyond
Lai, Chun Chi
Lu, Yi Wen
Wang, Wei Lin
Li, Chia Yu
Chien, Hung Ju
Lu, Ming Chen
2018 7TH IEEE INTERNATIONAL SYMPOSIUM ON NEXT-GENERATION ELECTRONICS (ISNE), 2018, : 333 - 335
[38] Highly Stable Al Metal Anode Enabled by Surface Chemical Passivation for Long-Life Aqueous Al Metal Batteries
Hao, Qingfei
Chen, Fei
Chen, Xiangtao
Meng, Qihan
Qi, Yang
Li, Na
ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (28) : 34303 - 34310
[39] Activation of Al2O3 surface passivation of silicon: Separating bulk and surface effects
Grant, N. E.
Pain, S. L.
Khorani, E.
Jefferies, R.
Wratten, A.
Mcnab, S.
Walker, D.
Han, Y.
Beanland, R.
Bonilla, R. S.
Murphy, J. D.
APPLIED SURFACE SCIENCE, 2024, 645
[40] NEW DRY ETCH FOR AL AND AL-CU-SI ALLOY - REACTIVELY MASKED SPUTTER ETCHING WITH SIF4
HORWITZ, CM
APPLIED PHYSICS LETTERS, 1983, 42 (10) : 898 - 900

← 1 2 3 4 5 →